Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· Low profile SOIC packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinoutSpecifications PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -20 V ...
ZXM64P02X: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· Low profile SOIC packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor co...
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| PARAMETER | SYMBOL | LIMIT | UNIT |
| Drain-Source Voltage | VDSS | -20 | V |
| Gate Source Voltage | VGS | ± 20 | V |
| Continuous Drain Current VGS=4.5V; TA=25°C(b) VGS=4.5V; TA=70°C(b) |
ID | -3.5 -2.8 |
A |
| Pulsed Drain Current (c) | IDM | -2.0 | A |
| Continuous Source Current (Body Diode) (b) | IS | -4.15 | A |
| Pulsed source current (body diode) (c) | ISM | -19 | A |
| Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | -3.5 -2.8 |
W mW/°C |
| Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 1.8 14.4 |
W mW/°C |
| Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
| Part Number | ZXM64P02X |
| Config/ Polarity |
P |
| PD (W) |
1.8 |
| VDSS (V) |
-20 |
| VGSS (+/-) (V) |
12 |
| ID (A) |
-3.5 |
| RDS(on) Max() @ VGS;-1.8V | - |
| RDS(on) Max() @ VGS;-2.5V | - |
| RDS(on) Max() @ VGS;-2.7V | 0.13 |
| RDS(on) Max() @ VGS -4.5V | 0.09 |
| RDS(on) Max() @ VGS;-10V | - |
| VGS(th) (V) |
-0.7(Min) |
| Ciss (typ) (pF) |
900 |
| Qg (typ) (nC) @VGS 4.5V |
6.9(Max) |
| Qg (typ) (nC) @VGS 10V |
- |
This new generation of high density MOSFETs ZXM64P02X from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.