ZXM66P02N8TA

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 25 mOhms at 4.5 V


Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package


Application

• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control


Pinout




Specifications

Parameter	Symbol	LIMIT	Unit
Drain to source voltage	VDSS	-20	V
Gate-to-Source Voltage	VGS	±12	V
Drain Current Continuous VGS=-4.5V; TA=25 (b) VGS=-4.5V; TA=70 (b) VGS=-4.5V; TA=25 (a)	ID	-8.0 -6.5 -6.4	A
Pulsed Drain Current	IDM	-28	A
Continuous Source Current (Diode Conduction)*	IS	-4.15	A
Pulsed Source Current (Body Diode)(c)	ISM	-28	A
Power Dissipation at TA=25 (a) Linear Derating Factor	PD	1.56 12.5	W mW/
Power Dissipation at TA=25 (b) Linear Derating Factor	PD	2.5 20	W mW/
Operating and Storage Temperature Range	TJ,Tstg	-55 to +150

Description

This new generation of high density MOSFETs ZXM66P02N8TA from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.