ZXM66P02N8TA

MOSFET 20V P-Chnl HDMOS

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SeekIC No. : 00150668 Detail

ZXM66P02N8TA: MOSFET 20V P-Chnl HDMOS

floor Price/Ceiling Price

US $ .9~1.81 / Piece | Get Latest Price
Part Number:
ZXM66P02N8TA
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1.81
  • $1.54
  • $1.13
  • $.9
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 25 mOhms at 4.5 V Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 25 mOhms at 4.5 V


Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package



Application

• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control



Pinout

  Connection Diagram


Specifications

Parameter Symbol LIMIT Unit
Drain to source voltage VDSS -20 V
Gate-to-Source Voltage VGS ±12 V
Drain Current Continuous
VGS=-4.5V; TA=25 (b)
VGS=-4.5V; TA=70 (b)
VGS=-4.5V; TA=25 (a)
ID -8.0
-6.5
-6.4
A
Pulsed Drain Current IDM -28 A
Continuous Source Current (Diode Conduction)* IS -4.15 A
Pulsed Source Current (Body Diode)(c) ISM -28 A
Power Dissipation at TA=25 (a) Linear Derating Factor PD 1.56
12.5
W
mW/
Power Dissipation at TA=25 (b) Linear Derating Factor PD 2.5
20
W
mW/
Operating and Storage Temperature Range TJ,Tstg -55 to +150



Description

This new generation of high density MOSFETs ZXM66P02N8TA from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.




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