ZXM66P03N8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Management Functions• Disconnect switches• Motor controlPinoutSpecifications Part Number Z...

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ZXM66P03N8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC - DC Converters• Power Managemen...

floor Price/Ceiling Price

Part Number:
ZXM66P03N8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package





Application

• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control





Pinout

  Connection Diagram




Specifications

Part Number ZXM66P03N8
Config/
Polarity
P
PD
(W)
0.8
VDSS
(V)
-20
VGSS (+/-)
(V)
12
ID
(A)
-1.5
RDS(on) Max() @ VGS;-1.8V -
RDS(on) Max() @ VGS;-2.5V -
RDS(on) Max() @ VGS;-2.7V -
RDS(on) Max() @ VGS -4.5V 0.23
RDS(on) Max() @ VGS;-10V 0.15
VGS(th)
(V)
-1(Min)
Ciss (typ)
(pF)
330
Qg (typ) (nC)
@VGS 4.5V
-
Qg (typ) (nC)
@VGS 10V
10.2 (max)


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -30 V
Gate Source Voltage VGS ± 20 V
Continuous Drain CurrentVGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
ID -7.9
-6.3
-6.25
A
Pulsed Drain Current (c) IDM -28 A
Continuous Source Current (Body Diode) (b) IS -4.1 A
Pulsed source current (body diode) (c) ISM -28 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD 1.56
12.5
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD 2.5
20
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of high density MOSFETs ZXM66P03N8 from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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