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ZXMHC3A01N8TC

MOSFET Mosfet H-Bridge 30/-30V 2.7/-2.1A

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SeekIC No. : 00152334 Detail

ZXMHC3A01N8TC: MOSFET Mosfet H-Bridge 30/-30V 2.7/-2.1A

ZXMHC3A01N8TC Data Sheet

floor Price/Ceiling Price

US $ .42~.68 / Piece | Get Latest Price
Part Number:
ZXMHC3A01N8TC
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.68
  • $.59
  • $.49
  • $.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : - 30 V, 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : - 2.06 A, 2.72 A
Resistance Drain-Source RDS (on) : 125 mOhm to 330 mOhm Configuration : H-Bridge
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8
Transistor Polarity : N and P-Channel
Drain-Source Breakdown Voltage : - 30 V, 30 V
Continuous Drain Current : - 2.06 A, 2.72 A
Resistance Drain-Source RDS (on) : 125 mOhm to 330 mOhm
Configuration : H-Bridge


Parameters:

Technical/Catalog InformationZXMHC3A01N8TC
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N and 2 P-Channel (H-Bridge)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.17A, 1.64A
Rds On (Max) @ Id, Vgs125 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds 190pF @ 25V
Power - Max870mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3.9nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names ZXMHC3A01N8TC
ZXMHC3A01N8TC
ZXMHC3A01N8DITR ND
ZXMHC3A01N8DITRND
ZXMHC3A01N8DITR



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