ZXMN0545G4 Selling Leads, Price trend, ZXMN0545G4 DataSheet download, circuit diagram from SeekIC.com

Features: • High voltage• Low on-resistance• Fast switching speed• Low gate drive• Low threshold• SOT223 package variant engineered to increase spacing between high voltage pinsApplication• Off-line power supply start-up circuitryPinoutSpecifications ...

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SeekIC No. : 004552463 Detail

ZXMN0545G4: Features: • High voltage• Low on-resistance• Fast switching speed• Low gate drive• Low threshold• SOT223 package variant engineered to increase spacing between hi...

ZXMN0545G4 Data Sheet

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Part Number:: ZXMN0545G4
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/18

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Recent History
What is this?

ZXMN0545FFTA evaluate
US $.24 - .72 / Piece

MOSFET N-CH 450V SOT23F-3
ZXMN0545G4TA evaluate
US $.44 - .64 / Piece

MOSFET 450V 140mA N-Channel Enhancement MOSFET
ZXMN10A07F evaluate
Features: • Low on-resistance• Fast switching speed• Low threshold• Low ga...

Product Details

Description

Features:

• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• SOT223 package variant engineered to increase spacing between high voltage pins

Application

• Off-line power supply start-up circuitry

Pinout

Connection Diagram

Specifications

PARAMETER	SYMBOL	VALUE	UNIT
Drain-Source Voltage	V_DS	450	V
Gate Source Voltage	V_GS	±20	V
Continuous Drain Current (V_GS=10V; T_amb=25°C)^(a)	I_D	140	mA
Pulsed Drain Current ^(c)	I_DM	600	mA
Continuous Source Current (Body Diode)^(b)	I_S	140	A
Pulsed Source Current (Body Diode) ^(c)	I_SM	600	A
Power Dissipation at Tamb=25°C^(a) Linear derating factor	P_tot	2.0 1.6	W mW/

NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

Description

This 450V enhancement mode N-channel MOSFET ZXMN0545G4 provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.

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ZXMN0545G4

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