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ZXMP2120G4

Features: • High voltage• Low on-resistance• Fast switching speed• Low gate drive• Low threshold• SOT223 package variant engineered to increase spacing between high voltage pins.Application• Active clamping of primary side MOSFETs in 48 volt DC-DC converte...

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SeekIC No. : 004552527 Detail

ZXMP2120G4: Features: • High voltage• Low on-resistance• Fast switching speed• Low gate drive• Low threshold• SOT223 package variant engineered to increase spacing between hi...

ZXMP2120G4 Data Sheet

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Part Number:
ZXMP2120G4
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• SOT223 package variant engineered to increase spacing between high voltage pins.




Application

• Active clamping of primary side MOSFETs in 48 volt DC-DC converters




Pinout

Connection Diagram




Specifications

CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V -200
Gate-Source Voltage VGS V ±20
Continuous Drain Current (VGS=10V; Tamb=25°C)(a) ID mA -200
Pulsed Drain Current (c) IDM A -1.2
Pulsed Source Current (Body Diode) (c) ISM A -1.2
Power Dissipation at Tamb=25°C (a)
Linear derating factor		 Ptot W
mW/°C		 2.0
1.6
Operating and Storage Temperature Range Tj:Tstg -55 to +150





Description

This 200V enhancement mode P-channel MOSFET ZXMP2120G4 provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.

A SOT23-5 version is also available (ZXMP2120E5






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