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ZXMP6A17DN8

Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC-DC Converters• Power Management functions• Disconnect switches• Motor controlPinoutSpecifications Part Number ZXM...

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SeekIC No. : 004552545 Detail

ZXMP6A17DN8: Features: • Low on-resistance• Fast switching speed• Low threshold• Low gate drive• Low profile SOIC packageApplication• DC-DC Converters• Power Management ...

ZXMP6A17DN8 Data Sheet

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Part Number:
ZXMP6A17DN8
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package




Application

• DC-DC Converters
• Power Management functions
• Disconnect switches
• Motor control




Pinout

Connection Diagram




Specifications

Part Number ZXMP6A17DN8
Config/
Polarity		 2 x P
PD
(W)		 2.15
VDSS
(V)		 -60
VGSS (+/-)
(V)		 20
ID
(A)		 -3.2
RDS(on) Max() @ VGS; -2.5V -
RDS(on) Max() @ VGS; 4.0V -
RDS(on) Max() @ VGS; -4.5V 0.19
RDS(on) Max() @ VGS; -5V -
RDS(on) Max() @ VGS; -10V 0.125
VGS(th)
(V)		 -1(Min)
Ciss (typ)
(pF)		 637
Qg (typ) (nC)
@ VGS; 10V		 17.7


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current@VGS=10V; TA=25 (b)(d)
@VGS=10V; TA=70 (b)(d)
@VGS=10V; TA=25 (a)(d)		 ID -3.1
-2.4
-2.3		 A
A
A
Pulsed Drain Current (c) IDM -11.1 A
Continuous Source Current (Body Diode)(b) IS -3.0 A
Pulsed Source Current (Body Diode)(c) ISM -11.1 A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor		 PD 1.25
10		 W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor		 PD 1.81
14.5		 W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor		 PD 2.15
17		 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C





Description

This new generation of high cell density planar MOSFETs ZXMP6A17DN8 from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.






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