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ZXT10N50DE6

Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 12A• IC=3A Continuous Collector Current• SOT23-6 packageApplication• DC - DC Converters• Power Management Functions• Power switches• Motor contr...

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ZXT10N50DE6: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 12A• IC=3A Continuous Collector Current• SOT23-6 packageApplication&...

ZXT10N50DE6 Data Sheet

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Part Number:
ZXT10N50DE6
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Features:

• Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• hFE characterised up to 12A
• IC=3A Continuous Collector Current
• SOT23-6 package




Application

• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control




Pinout

Connection Diagram




Specifications

PARAMETER SYMBOL
LIMIT
UNIT
Collector-base voltage VCBO
50
V
Collector-emitter voltage VCEO
50
V
Emitter-base voltage VEBO
5
V
Peak Pulse Current ICM
6
A
Continuous Collector Current IC
3
A
Base Current IB
500
mA
Power Dissipation at TA=25°C(a)
Linear Derating Factor
 PD
1.1
8.8
W
mW/
Power Dissipation at TA=25°C(b)
Linear Derating Factor
 PD
1.7
13.6
W
mW/
Operating and Storage Temperature Range Tj:Tstg
-55 to +150


Part Number ZXT10N50DE6
Product Type NPN
VCEO (V) 50
IC(A) 3
ICM (A) 6
PD (W) 1.1
hFE Min 300
100
hFE Max -
@I C (A) 0.2
2
VCE(SAT) Max (mV) 20
200
@ IC (A) 0.1
50
2
@ IB (mA) 10
50
fT Min (MHz) 100
RCE (SAT) (m) 75





Description

This ZXT10N50DE6 new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.






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