ZXT10P12DE6

Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 10A• IC=3A Continuous Collector Current• SOT23-6 packageApplication• DC - DC Converters• Power Management Functions• Power switches• Motor contr...

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SeekIC No. : 004552585 Detail

ZXT10P12DE6: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 10A• IC=3A Continuous Collector Current• SOT23-6 packageApplication&...

floor Price/Ceiling Price

Part Number:
ZXT10P12DE6
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

• Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• hFE characterised up to 10A
• IC=3A Continuous Collector Current
• SOT23-6 package





Application

• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control





Pinout

  Connection Diagram




Specifications

Part Number ZXT10P12DE6
Product Type PNP
VCEO(V) -12
IC (A) -3
ICM (A) -10
PD (W) 1.1
hFE Min 300
180
hFE Max -
@ IC (A) -0.1
-2.5
VCE (SAT) Max (mV) -17
-300
@ IC (A) -0.1
-3
@ IB (mA) -10
-50
fT Min (MHz) 80
RCE (SAT) (m) 65


PARAMETER SYMBOL
LIMIT
UNIT
Collector-base voltage VCBO
-12
V
Collector-emitter voltage VCEO
-12
V
Emitter-base voltage VEBO
-5
V
Peak Pulse Current ICM
-10
A
Continuous Collector Current IC
-3
A
Base Current IB
-500
mA
Power Dissipation at TA=25°C(a)
Linear Derating Factor
PD
1.1
8.8
W
mW/
Power Dissipation at TA=25°C(b)
Linear Derating Factor
PD
1.7
13.6
W
mW/
Operating and Storage Temperature Range Tj:Tstg
-55 to +150





Description

This ZXT10P12DE6 new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.






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