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ZXT12N20DX

Features: • Extremely Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 10A• IC=3.5A Continuous Collector Current• MSOP8 packageApplication• DC - DC Converters• Power Management Functions• Power switches• M...

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SeekIC No. : 004552590 Detail

ZXT12N20DX: Features: • Extremely Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 10A• IC=3.5A Continuous Collector Current• MSOP8 packageAp...

ZXT12N20DX Data Sheet

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Part Number:
ZXT12N20DX
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Extremely Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• hFE characterised up to 10A
• IC=3.5A Continuous Collector Current
• MSOP8 package




Application

• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control




Pinout

Connection Diagram




Specifications

PARAMETER SYMBOL
LIMIT
UNIT
Collector-base voltage VCBO
50
V
Collector-emitter voltage VCEO
20
V
Emitter-base voltage VEBO
7.5
V
Peak Pulse Current ICM
15
A
Continuous Collector Current IC
3.5
A
Base Current IB
500
mA
Power Dissipation at TA=25°C(a)(d)
Linear Derating Factor
 PD
0.87
6.9
W
mW/
Power Dissipation at TA=25°C(a)(e)
Linear Derating Factor
 PD
1.04
8.3
W
mW/
Power Dissipation at TA=25°C(b)(d)
Linear Derating Factor		 PD
1.25
10
W
mW/
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
</

Part Number ZXT12N20DX
Product Type NPN + NPN
VCEO(V) 20
IC (A) 3.5
ICM (A) 15
PD (W) 1.25
hFE Min 300
200
hFE Max 900
@ IC (A) 1
3.5
VCE (SAT) Max (mV) 100
200
@ IC (A) 1
3.5
@ IB (mA) 10
50
fT Min (MHz) 112
RCE (SAT) (m) 40





Description

This ZXT12N20DX new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.






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