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ZXT12N50DX

Features: • Extremely Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 5A• IC=3A Continuous Collector Current• MSOP8 packageApplication• DC - DC Converters• Power Management Functions• Power switches• Moto...

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ZXT12N50DX: Features: • Extremely Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 5A• IC=3A Continuous Collector Current• MSOP8 packageAppli...

ZXT12N50DX Data Sheet

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Part Number:
ZXT12N50DX
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

• Extremely Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• hFE characterised up to 5A
• IC=3A Continuous Collector Current
• MSOP8 package




Application

• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control




Pinout

Connection Diagram




Specifications

Part Number ZXT12N50DX
Product Type NPN + NPN
VCEO (V) 50
IC(A) 3
ICM (A) 10
PD (W) 1.25
hFE Min 300
150
hFE Max 900
@I C (A) 1
3
VCE(SAT) Max (mV) 120
250
@ IC (A) 1
3
@ IB (mA) 10
50
fT Min (MHz) 132
RCE (SAT) (m) 45


PARAMETER SYMBOL
LIMIT
UNIT
Collector-base voltage VCBO
100
V
Collector-emitter voltage VCEO
50
V
Emitter-base voltage VEBO
7.5
V
Peak Pulse Current ICM
10
A
Continuous Collector Current IC
3
A
Base Current IB
500
mA
Power Dissipation at TA=25°C(a)(d)
Linear Derating Factor
 PD
0.87
6.9
W
mW/
Power Dissipation at TA=25°C(a)(e)
Linear Derating Factor
 PD
1.04
8.3
W
mW/
Power Dissipation at TA=25°C(b)(d)
Linear Derating Factor		 PD
1.25
10
W
mW/
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
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Description

This ZXT12N50DX new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.






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