Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (-220mV @-1A)• hFE characterised up to -6A• IC= -3.5A Continuous Collector Current• 2mm x 2mm MLPApplication• DC - DC Converters (FET Drivers)• Charging Circuits• Power switch...
ZXT2M322: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (-220mV @-1A)• hFE characterised up to -6A• IC= -3.5A Continuous Collector Current• 2mm x 2mm...
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US $329.67 - 378.51 / Piece
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PARAMETER | SYMBOL |
LIMIT |
UNIT |
Collector-base voltage | VCBO |
-25 |
V |
Collector-emitter voltage | VCEO |
-20 |
V |
Emitter-base voltage | VEBO |
-7.5 |
V |
Peak Pulse Current(c) | ICM |
-6 |
A |
Continuous Collector Current(a) | IC |
-3.5 |
A |
Base Current | IB |
-1000 |
mA |
Power Dissipation at TA=25°C(a) Linear Derating Factor |
PD |
1.5 12 |
W mW/ |
Power Dissipation at TA=25°C(b) Linear Derating Factor |
PD |
2.45 19.6 |
W mW/ |
Power Dissipation at TA=25°C(d) Linear Derating Factor |
PD |
1 8 |
W mW/ |
Power Dissipation at TA=25°C(e) Linear Derating Factor |
PD |
3 24 |
W mW/ |
Operating and Storage Temperature Range | Tj:Tstg |
-55 to +150 |
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) ZXT2M322 outline, this new 4th generation low saturation transistors offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
Additionally users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
Lower package height (nom 0.9mm)
PCB area and device placement savings
Reduced component count ZXT2M322