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ZXTC2062E6

Features: • NPN-PNP combination• Very low saturation voltage• High gain• SOT23-6 packageApplication• MOSFET and IGBT gate driving• Motor drivePinoutSpecifications Part Number ZXTC2062E6 Product Type NPN + PNP VCEO(V) 20-20 IC (A) 4-3.5 I...

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SeekIC No. : 004552619 Detail

ZXTC2062E6: Features: • NPN-PNP combination• Very low saturation voltage• High gain• SOT23-6 packageApplication• MOSFET and IGBT gate driving• Motor drivePinoutSpecifications...

ZXTC2062E6 Data Sheet

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Part Number:
ZXTC2062E6
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/6

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Product Details

Description



Features:

• NPN-PNP combination
• Very low saturation voltage
• High gain
• SOT23-6 package




Application

• MOSFET and IGBT gate driving
• Motor drive




Pinout

Connection Diagram




Specifications

Part Number ZXTC2062E6
Product Type NPN + PNP
VCEO(V) 20
-20
IC (A) 4
-3.5
ICM (A) 10
-10
PD (W) 1.1
hFE Min 300
300
hFE Max 900
900
@ IC (A) 0.01
-0.01
VCE (SAT) Max (mV) 50
-65
@ IC (A) 1
-1
@ IB (mA) 100
-100
fT Min (MHz) 215
290
RCE (SAT) (m) 35
54


Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
100(-25)
V
Collector-emitter voltage (forward blocking voltage)
VCEX
(-)20
V
Collector-Emitter voltage
VECO
5(-4)
V
Emitter-base voltage
VEBO
(-)7
V
Continuous collector current(c)(f)
IC
4(-3.5)
A
Base current
IB
(-)1
A
Peak pulse current
ICM
(-)10
A
Power dissipation at TA=25(a)(f)
Linear derating factor
PD
0.7
5.6
W
mW/
Power dissipation at TA =25(b)(f)
Linear derating factor
PD
0.9
7.2
W
mW/
Power dissipation at TA =25(b)(g)
Linear derating factor
PD
1.1
8.8
W
mW/
Power dissipation at TA =25(c)(f)
Linear derating factor
PD
1.1
8.8
W
mW/
Power dissipation at TA =25(d)(f)
Linear derating factor
PD
1.7
13.6
W
mW/
Operating and storage temperature range
Tj, Tstg
-55 to 150
Thermal resistance junction to ambient(a)(f)
Thermal resistance junction to ambient(b)(f)
Thermal resistance junction to ambient(b)(g)
Thermal resistance junction to ambient(c)(f)
Thermal resistance junction to ambient(d)(f)
RJA
RJA
RJA
RJA
RJA
179
139
113
113
73
/W
/W
/W
/W
/W


NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d)As above measured at t<5 seconds.
(e) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(f) For device with one active die, both collectors attached to a common sink.
(g) For device with two active dice running at equal power, split sink 50% to each collector.






Description

ZXTC2062E6 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT23-6 package provides a compact solution for the intended applications






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