ZXTD1M832

Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (-140mV @ -1A)• hFE characterised up to -10A• IC = -4A Continuous Collector Current• 3mm x 2mm MLPApplication• DC - DC Converters (FET Drivers)• Charging circuits• Power switc...

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SeekIC No. : 004552623 Detail

ZXTD1M832: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (-140mV @ -1A)• hFE characterised up to -10A• IC = -4A Continuous Collector Current• 3mm x 2m...

floor Price/Ceiling Price

Part Number:
ZXTD1M832
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

• Low Equivalent On Resistance
• Extremely Low Saturation Voltage (-140mV @ -1A)
• hFE characterised up to -10A
• IC = -4A Continuous Collector Current
• 3mm x 2mm MLP





Application

• DC - DC Converters (FET Drivers)
• Charging circuits
• Power switches
• Motor control





Pinout

  Connection Diagram




Specifications

PARAMETER SYMBOL
LIMIT
UNIT
Collector-Base Voltage VCBO
-20
V
Collector-Emitter Voltage VCEO
-12
V
Emitter-Base Voltage VEBO
-7.5
V
Peak Pulse Current ICM
-12
A
Continuous Collector Current IC
-4
A
Continuous Collector Current (b) IC
-4.4
A
Base Current IB
-1000
mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
PD
2.45
19.6
W
mW/
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
PD
1
8
W
mW/
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
PD
1.13
9
W
mW/
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
PD
1.7
13.6
v
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
PD
3
24
W
mW/
Operating and Storage Temperature Range Tj:Tstg
-55 to +150


Part Number ZXTD1M832
Product Type PNP + PNP
VCEO(V) -12
IC (A) -4
ICM (A) -12
PD (W) 1.5
hFE Min 300
180
hFE Max -
@ IC (A) -0.1
-2.5
VCE (SAT) Max (mV) -140
-300
@ IC (A) -1
-4
@ IB (mA) -10
-150
fT Min (MHz) 100
RCE (SAT) (m) 60





Description

Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline ZXTD1M832, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
Reduced component count






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