Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (-140mV @ -1A)• hFE characterised up to -10A• IC = -4A Continuous Collector Current• 3mm x 2mm MLPApplication• DC - DC Converters (FET Drivers)• Charging circuits• Power switc...
ZXTD1M832: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (-140mV @ -1A)• hFE characterised up to -10A• IC = -4A Continuous Collector Current• 3mm x 2m...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
PARAMETER | SYMBOL |
LIMIT |
UNIT |
Collector-Base Voltage | VCBO |
-20 |
V |
Collector-Emitter Voltage | VCEO |
-12 |
V |
Emitter-Base Voltage | VEBO |
-7.5 |
V |
Peak Pulse Current | ICM |
-12 |
A |
Continuous Collector Current | IC |
-4 |
A |
Continuous Collector Current (b) | IC |
-4.4 |
A |
Base Current | IB |
-1000 |
mA |
Power Dissipation at TA=25°C (a)(f) Linear Derating Factor |
PD |
1.5 12 |
W mW/ |
Power Dissipation at TA=25°C (b)(f) Linear Derating Factor |
PD |
2.45 19.6 |
W mW/ |
Power Dissipation at TA=25°C (c)(f) Linear Derating Factor |
PD |
1 8 |
W mW/ |
Power Dissipation at TA=25°C (d)(f) Linear Derating Factor |
PD |
1.13 9 |
W mW/ |
Power Dissipation at TA=25°C (d)(g) Linear Derating Factor |
PD |
1.7 13.6 |
v |
Power Dissipation at TA=25°C (e)(g) Linear Derating Factor |
PD |
3 24 |
W mW/ |
Operating and Storage Temperature Range | Tj:Tstg |
-55 to +150 |
Part Number | ZXTD1M832 |
Product Type | PNP + PNP |
VCEO(V) | -12 |
IC (A) | -4 |
ICM (A) | -12 |
PD (W) | 1.5 |
hFE Min | 300 180 |
hFE Max | - |
@ IC (A) | -0.1 -2.5 |
VCE (SAT) Max (mV) | -140 -300 |
@ IC (A) | -1 -4 |
@ IB (mA) | -10 -150 |
fT Min (MHz) | 100 |
RCE (SAT) (m) | 60 |
Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline ZXTD1M832, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
Reduced component count