Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (-220mV @ -1A)• hFE characterised up to -6A• IC = -3.5A Continuous Collector Current• 3mm x 2mm MLPApplication• DC - DC Converters (FET Drivers)• Charging circuits• Power swit...
ZXTD2M832: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (-220mV @ -1A)• hFE characterised up to -6A• IC = -3.5A Continuous Collector Current• 3mm x 2...
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Features: • Low Equivalent On Resistance• Low Saturation Voltage• IC=1A Continuo...

| Part Number | ZXTD2M832 |
| Product Type | PNP + PNP |
| VCEO(V) | -20 |
| IC (A) | -3.5 |
| ICM (A) | -6 |
| PD (W) | 1.5 |
| hFE Min | 300 150 |
| hFE Max | - |
| @ IC (A) | -0.1 -2 |
| VCE (SAT) Max (mV) | -220 -300 |
| @ IC (A) | -1 -3.5 |
| @ IB (mA) | -20 -350 |
| fT Min (MHz) | 150 |
| RCE (SAT) (m) | 64 |
| PARAMETER | SYMBOL |
LIMIT |
UNIT |
| Collector-Base Voltage | VCBO |
-25 |
V |
| Collector-Emitter Voltage | VCEO |
-20 |
V |
| Emitter-Base Voltage | VEBO |
-7.5 |
V |
| Peak Pulse Current | ICM |
-6 |
A |
| Continuous Collector Current (a)(f) | IC |
-3.6 |
A |
| Base Current | IB |
-1000 |
mA |
| Power Dissipation at TA=25°C (a)(f) Linear Derating Factor |
PD |
1.5 12 |
W mW/ |
| Power Dissipation at TA=25°C (b)(f) Linear Derating Factor |
PD |
2.45 19.6 |
W mW/ |
| Power Dissipation at TA=25°C (c)(f) Linear Derating Factor |
PD |
1 8 |
W mW/ |
| Power Dissipation at TA=25°C (d)(f) Linear Derating Factor |
PD |
1.13 9 |
W mW/ |
| Power Dissipation at TA=25°C (d)(g) Linear Derating Factor |
PD |
1.7 13.6 |
W mW/ |
| Power Dissipation at TA=25°C (e)(g) Linear Derating Factor |
PD |
3 24 |
W mW/ |
| Operating and Storage Temperature Range | Tj:Tstg |
-55 to +150 |
| PARAMETER | SYMBOL | <td
Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline ZXTD2M832, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
Reduced component count