Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (-220mV max @1A)• hFE specified up to -3A• IC = -3A Continuous Collector Current• 3mm x 2mm MLPApplication• DC - DC Converters• Charging circuits• Power switches• Motor ...
ZXTD3M832: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (-220mV max @1A)• hFE specified up to -3A• IC = -3A Continuous Collector Current• 3mm x 2mm M...
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Features: • Low Equivalent On Resistance• Low Saturation Voltage• IC=1A Continuo...
Part Number | ZXTD3M832 |
Product Type | PNP + PNP |
VCEO (V) | -40 |
IC(A) | -3 |
ICM (A) | -4 |
PD (W) | 1.5 |
hFE Min | 300 60 |
hFE Max | - |
@I C (A) | -0.1 -1.5 |
VCE(SAT) Max (mV) | -40 -370 |
@ IC (A) | -0.1 -2.5 |
@ IB (mA) | -10 -250 |
fT Min (MHz) | 150 |
RCE (SAT) (m) | 104 |
Parameter | Symbol | Ratings | Unit |
Collector-Base Voltage | VCBO | -50 | V |
Collector-Emitter Voltage | VCEO | -40 | V |
Emitter-Base Voltage | VEBO | -7.5 | V |
Peak Pulse Current | ICM | -4 | A |
Continuous Collector Current (a) (f) | IC | -3 | A |
Base Current | IB | -1000 | mA |
Power Dissipation at TA=25 (a)(f) Linear Derating Factor |
PD | 1.5 1.2 |
W mW/ |
Power Dissipation at TA=25 (b)(f) Linear Derating Factor |
PD | 2.45 19.6 |
W mW/ |
Power Dissipation at TA=25 (c)(f) Linear Derating Factor |
PD | 1 8 |
W mW/ |
Power Dissipation at TA=25 (d)(f) Linear Derating Factor |
PD | 1.13 9 |
W mW/ |
Power Dissipation at TA=25 (d)(g) Linear Derating Factor |
PD | 1.7 13.6 |
W mW/ |
Power Dissipation at TA=25 (e)(g) Linear Derating Factor |
PD | 3 24 |
W mW/ |
Operating & Storage Temperature Range | TJ , TSTG | -55 to +150 | |
Junction Temperature | Tj | 150 |
Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package) outline ZXTD3M832, these new 4th generation low saturation dual PNP transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions.