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ZXTD4591E6

Features: • Low Equivalent On Resistance - NPN RCE(sat) 210mΩ at 1A- PNP RCE(sat) 355mΩ at -1A• Low Saturation Voltage• hFE characterised up to 2A• IC=1A Continuous Collector Current• SOT23-6 packageApplication• MOSFET gate driver• Low Power Mo...

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SeekIC No. : 004552627 Detail

ZXTD4591E6: Features: • Low Equivalent On Resistance - NPN RCE(sat) 210mΩ at 1A- PNP RCE(sat) 355mΩ at -1A• Low Saturation Voltage• hFE characterised up to 2A• IC=1A Continuo...

ZXTD4591E6 Data Sheet

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Part Number:
ZXTD4591E6
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Features:

• Low Equivalent On Resistance - NPN RCE(sat) 210mΩ at 1A
- PNP RCE(sat) 355mΩ at -1A
• Low Saturation Voltage
• hFE characterised up to 2A
• IC=1A Continuous Collector Current
• SOT23-6 package




Application

• MOSFET gate driver
• Low Power Motor Drive
• Low Power DC-DC Converters




Pinout

Connection Diagram




Specifications

PARAMETER SYMBOL LIMIT NPN LIMIT PNP UNIT
Collector-base voltage BVCBO 80 -80 V
Collector-emitter voltage BVCEO 60 -60 V
Emitter-base voltage BVEBO 5 -5 V
Peak pulse current ICM 2 -2 A
Continuous collector current IC 1 -1 A
Base Current IB 500 -500 mA
Power dissipation at TA =25°C (a)
Linear derating factor		 PD 1.1
8.8		 1.1
8.8		 W
mW/°C
Power dissipation at TA =25°C (b)
Linear derating factor		 PD 1.7
13.6		 1.7
13.6		 W
mW/°C
Operating and storage temperature range Tj, Tstg -55 to +150 -55 to +150 °C


Part Number ZXTD4591E6
Product Type NPN + PNP
VCEO (V) 60
-60
IC (A) 1
-1
ICM (A) 2
-2
PD (W) 1.1
hFE Min 100
100
hFE Max 300
300
@ IC (A) 0.5
-0.5
VCE (SAT) Max (mV) 250
-300
@ IC (A) 0.5
-0.5
@ IB (mA) 50
-50
fT Min (MHz) 150
150
RCE (SAT) (m) 210
355





Description

Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package ZXTD4591E6.




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