ZXTD6717E6

Features: • Low Saturation Voltage• RCE(sat)values NPN =135mΩ at 1.5A-PNP =150mΩ at 1.25A• hFE min 200 at 1A• IC=1.5A Continuous (NPN), 1.25A (PNP)• SOT23-6 package with PD = 1.1WApplication• Various driving functionsLampsMotorsRelays and solenoids&#...

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SeekIC No. : 004552628 Detail

ZXTD6717E6: Features: • Low Saturation Voltage• RCE(sat)values NPN =135mΩ at 1.5A-PNP =150mΩ at 1.25A• hFE min 200 at 1A• IC=1.5A Continuous (NPN), 1.25A (PNP)• SOT23-6...

floor Price/Ceiling Price

Part Number:
ZXTD6717E6
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Description



Features:

• Low Saturation Voltage
• RCE(sat)values NPN =135mΩ at 1.5A
-PNP =150mΩ at 1.25A
• hFE min 200 at 1A
• IC=1.5A Continuous (NPN), 1.25A (PNP)
• SOT23-6 package with PD = 1.1W





Application

• Various driving functions
Lamps
Motors
Relays and solenoids
• High output current switches





Pinout

  Connection Diagram




Specifications

Part Number ZXTD6717E6
Product Type NPN + PNP
VCEO(V) 15
-12
IC (A) 1.5
-1.25
ICM (A) 5
-3
PD (W) 1.1
hFE Min 200
-125
hFE Max -
@ IC (A) 1
1.25
VCE (SAT) Max (mV) 200
-215
@ IC (A) 1
-1
@ IB (mA) 10
-50
fT Min (MHz) 180
220
RCE (SAT) (m) 135
150


PARAMETER SYMBOL
LIMIT NPN
LIMIT PNP
UNIT
Collector-base voltage VCBO
15
-12
V
Collector-emitter voltage VCEO
15
-12
V
Emitter-base voltage VEBO
5
-5
V
Peak Pulse Current ICM
5
-3
A
Base Current IB
1.5
-1.25
A
Continuous Collector Current(b) IC
200
-200
A
Power Dissipation at TA=25°C(a)
Linear Derating Factor
PD
1.1
8.8
1.1
8.8
W
mW/
Power Dissipation at TA=25°C(b)
Linear Derating Factor
PD
1.7
13.6
1.7
13.6
W
mW/
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
-55 to +150





Description

This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package ZXTD6717E6. Users benefit from very efficient performance combining a high current operation, exceptionally low VCE(sat) and high HFE resulting in extremely low on state losses. This dual transistor is ideal for use in a variety of efficient driving functions of the ZXTD6717E6 including motors, lamps, relays and solenoids and will also benefit circuits requiring high output current switching.






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