ZXTDA1M832

Features:

• Low Equivalent On Resistance
• Extremely Low Saturation Voltage (100mV max @1A--NPN)
• H_FE specified up to 12A
• I_C = 4.5A Continuous Collector Current
• 3mm x 2mm MLP




Application

• DC - DC Converters
• Charging circuits
• Power switches
• Motor control
• LED Backlighting circuits




Pinout






Specifications

PARAMETER	SYMBOL	NPN	PNP	UNIT
Collector-Base Voltage	VCBO	40	-20	V
Collector-Emitter Voltage	VCEO	15	-12	V
Emitter-Base Voltage	VEBO	7.5	-7.5	V
Peak Pulse Current	ICM	15	-12	A
Continuous Collector Current (a)(f)	IC	4.5	-4	A
Continuous Collector Current (b)(f)	IC	5	-4.4	A
Base Current	IB	1000		mA
Power Dissipation at TA=25°C (a)(f) Linear Derating Factor	PD	1.5 12		W mW/
Power Dissipation at TA=25°C (b)(f) Linear Derating Factor	PD	2.45 19.6		W mW/
Power Dissipation at TA=25°C (c)(f) Linear Derating Factor	PD	1 8		W mW/
Power Dissipation at TA=25°C (d)(f) Linear Derating Factor	PD	1.13 9		W mW/
Power Dissipation at TA=25°C (d)(g) Linear Derating Factor	PD	1.7 13.6		W mW/
Power Dissipation at TA=25°C (e)(g) Linear Derating Factor	PD	3 24		W mW/
Storage Temperature Range	Tstg	-55 to +150
Junction Temperature	Tj	150

Description

Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package) ZXTDA1M832, these low saturation NPN / PNP combination dual transistors offer lower on state losses making them ideal for use in DC-DC circuits and various driving and power-management functions.

Users will also gain several other key benefits:

Performance capability equivalent to much larger packages

Improved circuit efficiency & power levels

PCB area and device placement savings

Lower package height (0.9mm nom)

Reduced component count ZXTDA1M832