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ZXTDAM832

Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (100mV @1A)• hFE characterised up to 12A• IC= 4.5A Continuous Collector Current• 3mm x 2mm MLPApplication• DC - DC Converters (FET Drivers)• Charging circuits• Power switches&...

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ZXTDAM832: Features: • Low Equivalent On Resistance• Extremely Low Saturation Voltage (100mV @1A)• hFE characterised up to 12A• IC= 4.5A Continuous Collector Current• 3mm x 2mm ML...

ZXTDAM832 Data Sheet

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Part Number:
ZXTDAM832
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low Equivalent On Resistance
• Extremely Low Saturation Voltage (100mV @1A)
• hFE characterised up to 12A
• IC= 4.5A Continuous Collector Current
• 3mm x 2mm MLP




Application

• DC - DC Converters (FET Drivers)
• Charging circuits
• Power switches
• Motor control




Pinout

Connection Diagram




Specifications

Part Number ZXTDAM832
Product Type NPN + NPN
VCEO(V) 15
IC (A) 4.5
ICM (A) 15
PD (W) 1.5
hFE Min 200
hFE Max -
@ IC (A) 0.2
3
VCE (SAT) Max (mV) 100
280
@ IC (A) 1
4.5
@ IB (mA) 10
50
fT Min (MHz) 80
RCE (SAT) (m) 45


PARAMETER SYMBOL
LIMIT
UNIT
Collector-Base Voltage VCBO
40
V
Collector-Emitter Voltage VCEO
15
V
Emitter-Base Voltage VEBO
7.5
V
Peak Pulse Current ICM
15
A
Continuous Collector Current (a)(f) IC
4.5
A
Continuous Collector Current (b)(f) IC
5.0
A
Base Current IB
1000
mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor		 PD
1.5
12
W
mW/
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor		 PD
2.45
19.6
W
mW/
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor		 PD
1
8
W
mW/
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor		 PD
1.13
9
W
mW/
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor		 PD
1.7
13.6
W
mW/
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor		 PD
3
24
W
mW/
Operating and Storage Temperature Range Tj:Tstg
-55 to +150





Description

Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) utline ZXTDAM832, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions.

Additionally users gain several other key benefits:

Performance capability equivalent to much larger packages

Improved circuit efficiency & power levels

PCB area and device placement savings

Lower package height (nom. 0.9mm)

Reduced component count  ZXTDAM832






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