ZXTDB2M832

Features: • Low Equivalent On Resistance• Low Saturation Voltage (150mV max @1A--NPN)• HFE specified up to 6A• IC = 4.5A Continuous Collector Current• 3mm x 2mm MLPApplication• DC - DC Converters• Charging circuits• Power switches• Motor contro...

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SeekIC No. : 004552631 Detail

ZXTDB2M832: Features: • Low Equivalent On Resistance• Low Saturation Voltage (150mV max @1A--NPN)• HFE specified up to 6A• IC = 4.5A Continuous Collector Current• 3mm x 2mm MLPAppl...

floor Price/Ceiling Price

Part Number:
ZXTDB2M832
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

• Low Equivalent On Resistance
• Low Saturation Voltage (150mV max @1A--NPN)
• HFE specified up to 6A
• IC = 4.5A Continuous Collector Current
• 3mm x 2mm MLP





Application

• DC - DC Converters
• Charging circuits
• Power switches
• Motor control





Pinout

  Connection Diagram




Specifications

PARAMETER SYMBOL NPN PNP UNIT
Collector-Base Voltage VCBO 40 -25 V
Collector-Emitter Voltage VCEO 20 -20 V
Emitter-Base Voltage VEBO 7.5 -7.5 V
Peak Pulse Current ICM 12 -6 A
Continuous Collector Current (a)(f) IC 4.5 -3.5 A
Continuous Collector Current (a)(f) IC 5 -3.8 A
Base Current IB 1000 mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
PD 1.5
12
W mW/
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
PD 2.45
19.6
W mW/
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
PD 1
8
W mW/
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
PD 1.13
8
W mW/
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
PD 1.7
13.6
W mW/
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
PD 3
24
W mW/
Storage Temperature Range Tstg -55 to +150
Junction Temperature Tj 150


Part Number ZXTDB2M832
Product Type NPN + PNP
VCEO(V) 20
-20
IC (A) 4.5
-3.5
ICM (A) 12
-6
PD (W) 1.5
hFE Min 200
150
hFE Max -
@ IC (A) 2
-2
VCE (SAT) Max (mV) 150
-220
@ IC (A) 1
-1
@ IB (mA) 10
-20
fT Min (MHz) 100
150
RCE (SAT) (m) 47
64





Description

Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package) ZXTDB2M832, these low saturation NPN / PNP combination dual transistors offer lower on state losses making them ideal for use in DC-DC circuits and various driving and power-management functions.
Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count ZXTDB2M832






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