Features: • Very low saturation voltage• High gain• High forward blocking voltage• Low profile high dissipation packageApplication• MOSFET and IGBT gate driving• LED driving• Strobe flash• Motor drive• Micro buffersSpecifications SYMBOL P...
ZXTN19020CFF: Features: • Very low saturation voltage• High gain• High forward blocking voltage• Low profile high dissipation packageApplication• MOSFET and IGBT gate driving• ...
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SYMBOL | PARAMETER | RATING | UNIT |
VCBO | Collector to base voltage | 65 | V |
VCEX | Collector-emitter voltage (forward blocking) | 65 | V |
VCEO | Collector to emitter voltage | 20 | V |
VECO | Emitter-collector voltage (reverse blocking) | 4.5 | V |
VEBO | Emitter to base voltage | 7 | V |
IC | Continuous collector current(c) | 7 | A |
ICP | Peak pulse current | 1 | A |
IB | Base current | 15 | A |
PD | Power dissipation at Tamb =25(a) Linear derating factor |
0.84 6.72 |
W mW/ |
PD | Power dissipation at Tamb =25(b) Linear derating factor |
1.34 10.72 |
W mW/ |
PD | Power dissipation at Tamb =25(c) Linear derating factor |
1.50 12.0 |
W mW/ |
PD | Power dissipation at Tamb =25(d) Linear derating factor |
2.0 16.0 |
W mW/ |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -55 to +150 |
Advanced process capability ZXTN19020CFF has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.