ZXTN19020CFF

Features: • Very low saturation voltage• High gain• High forward blocking voltage• Low profile high dissipation packageApplication• MOSFET and IGBT gate driving• LED driving• Strobe flash• Motor drive• Micro buffersSpecifications SYMBOL P...

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SeekIC No. : 004552641 Detail

ZXTN19020CFF: Features: • Very low saturation voltage• High gain• High forward blocking voltage• Low profile high dissipation packageApplication• MOSFET and IGBT gate driving• ...

floor Price/Ceiling Price

Part Number:
ZXTN19020CFF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Features:

• Very low saturation voltage
• High gain
• High forward blocking voltage
• Low profile high dissipation package





Application

• MOSFET and IGBT gate driving
• LED driving
• Strobe flash
• Motor drive
• Micro buffers





Specifications

SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 65 V
VCEX Collector-emitter voltage (forward blocking) 65 V
VCEO Collector to emitter voltage 20 V
VECO Emitter-collector voltage (reverse blocking) 4.5 V
VEBO Emitter to base voltage 7 V
IC Continuous collector current(c) 7 A
ICP Peak pulse current 1 A
IB Base current 15 A
PD Power dissipation at Tamb =25(a)
Linear derating factor
0.84
6.72
W
mW/
PD Power dissipation at Tamb =25(b)
Linear derating factor
1.34
10.72
W
mW/
PD Power dissipation at Tamb =25(c)
Linear derating factor
1.50
12.0
W
mW/
PD Power dissipation at Tamb =25(d)
Linear derating factor
2.0
16.0

W
mW/
Tj Junction temperature 150
Tstg Storage temperaturerange -55 to +150





Description

Advanced process capability ZXTN19020CFF has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.






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