Features: ·Higher power dissipation SOT223 package·High peak current·Low saturation voltage·160V forward blocking voltage·6V reverse blocking voltageApplication·Motor drive·Lamp, relay and solenoid driveSpecifications Parameter Symbol Limit Unit Collector-Base voltage VCBO 1...
ZXTN19060CG: Features: ·Higher power dissipation SOT223 package·High peak current·Low saturation voltage·160V forward blocking voltage·6V reverse blocking voltageApplication·Motor drive·Lamp, relay and solenoid ...
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Parameter |
Symbol |
Limit |
Unit |
Collector-Base voltage |
VCBO |
160 |
V |
Collector-Emitter voltage (forward blocking) |
VCEX |
160 |
V |
Collector-Emitter voltage |
VCEO |
60 |
V |
Emitter-Collector voltage (reverse blocking) |
VECX |
6 |
V |
Emitter-Base voltage |
VEBO |
7 |
V |
Continuous Collector current(c) |
IC |
7 |
A |
Base current |
IB |
1 |
A |
Peak pulse current |
ICM |
12 |
A |
Power dissipation atTA =25(a) Linear derating factor |
PD |
1.2 9.6 |
W mW/ |
Power dissipation at TA =25(b) Linear derating factor |
PD |
1.6 12.8 |
W mW/ |
Power dissipation atTA =25(c) Linear derating factor |
PD |
3.0 24 |
W mW/ |
Power dissipation at TA =25(d) Linear derating factor |
PD |
5.3 42 |
W mW/ |
Power dissipation at TC =25(e) Linear derating factor |
PD |
10.2 81 |
W mW/ |
Operating and storage temperature range |
Tj ,T stg |
-55 to 150 |
|
Packaged in the SOT223 outline ZXTN19060CG this new low saturation NPN transistor offers extremely low on state losses making it l for use in DC-DCcircuits and various driving and power management functions.