Application• DC - DC converters• MOSFET gate drivers• Charging circuits• Power switches• Motor controlPinoutSpecifications PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BVCBO 60 V Collector-emitter voltage BVCEO 25 V Emitter-base voltage B...
ZXTN2005G: Application• DC - DC converters• MOSFET gate drivers• Charging circuits• Power switches• Motor controlPinoutSpecifications PARAMETER SYMBOL LIMIT UNIT Collec...
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| PARAMETER | SYMBOL | LIMIT | UNIT |
| Collector-base voltage | BVCBO | 60 | V |
| Collector-emitter voltage | BVCEO | 25 | V |
| Emitter-base voltage | BVEBO | 7 | V |
| Continuous collector current | IC | 7 | A |
| Peak pulse current | ICM | 20 | A |
| Power dissipation at TA =25 (a) Linear derating factor |
PD | 3.0 24 |
W mW/ |
| Power dissipation at TA =25 (b) Linear derating factor |
PD | 1.6 12.8 |
W mW/ |
| Operating and storage temperature range | Tj, Tstg | -55 to +150 |
Packaged in the SOT223 outline this new low saturation 25V NPN transistor ZXTN2005G offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.