Features: • Extremely low equivalent on-resistance; RSAT = 25m at 6.5A• 5.5 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hFE characteristics up to 20 ampsApplication• Emergency lighting circuits• Motor drivin...
ZXTN2005Z: Features: • Extremely low equivalent on-resistance; RSAT = 25m at 6.5A• 5.5 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent...
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PARAMETER |
SYMBOL |
LIMIT |
UNIT |
Collector-base voltage |
BVCBO |
60 |
V |
Collector-emitter voltage |
BVCEO |
25 |
V |
Emitter-base voltage |
BVEBO |
7 |
V |
Continuous collector current(a) |
IC |
5.5 |
A |
Peak pulse current |
ICM |
20 |
A |
Power dissipation at TA=25 (a) Linear derating factor |
PD |
1.5 12 |
W mW/ |
Power dissipation at TA=25 (b) Linear derating factor |
PD |
2.1 16.8 |
W mW/ |
Operating and storage temperature range |
Tj, Tstg |
-55 to +150 |
Part Number | ZXTN2005Z |
Product Type | NPN |
VCEO(V) | 25 |
IC (A) | 5.5 |
ICM (A) | 20 |
PD (W) | 2.1 |
hFE Min | 300 200 |
hFE Max | - |
@ IC (A) | 1 7 |
VCE (SAT) Max (mV) | 45 200 |
@ IC (A) | 1 6.5 |
@ IB (mA) | 100 150 |
fT Min (MHz) | 150 |
RCE (SAT) (m) | 25 |
Packaged in the SOT89 outline ZXTN2005Z this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.