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ZXTN2007G

Features: • Extemely low equivalent on-resistance; RSAT = 28m at 6.5A• 7 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hFE characteristics up to 20 ampsApplication• DC - DC converters• MOSFET gate drivers̶...

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ZXTN2007G: Features: • Extemely low equivalent on-resistance; RSAT = 28m at 6.5A• 7 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hF...

ZXTN2007G Data Sheet

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Part Number:
ZXTN2007G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Description



Features:

• Extemely low equivalent on-resistance; RSAT = 28m at 6.5A
• 7 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 20 amps




Application

• DC - DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control




Specifications

Part Number ZXTN2007G
Product Type NPN
VCEO (V) 30
IC(A) 7
ICM (A) 20
PD (W) 3
hFE Min 100
100
hFE Max 300
@I C (A) 1
7
VCE(SAT) Max (mV) 65
220
@ IC (A) 1
6.5
@ IB (mA) 20
300
fT Min (MHz) 140
RCE (SAT) (m) 28


PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current (a)
Peak pulse current
Power dissipation at TA =25°C (a)
Linear derating factor
Power dissipation at TA =25°C (b)
Linear derating factor
Operating and storage temperature range
BVCBO
BVCEO
BVEBO
IC
ICM
PD

PD

Tj, Tstg
80
30
7
7
20
3.0
24
1.6
12.8
-55 to +150
V
V
V
A
A
W
mW/°C
W
mW/°C
°C





Description

Packaged in the SOT223 outline ZXTN2007G this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.






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