ZXTN2010A

DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 130 MHz
Packaging : Bulk
Maximum DC Collector Current : 4.5 A
Package / Case : E-Line


Features:

• Extemely low equivalent on-resistance; RSAT = 34m at 5A
• 4.5 amps continuous current
• Up to 15 amps peak current
• Very low saturation voltages




Application

• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC modules
• Backlight inverters




Specifications

Part Number	ZXTN2010A
Product Type	NPN
VCEO (V)	60
IC (A)	4.5
ICM (A)	15
PD (W)	1
hFE Min	100 20
hFE Max	300
@ IC (A)	2 10
VCE (SAT) Max (mV)	65 210
@ IC (A)	1 5
@ IB (mA)	50 200
fT Min (MHz)	130
RCE (SAT) (m)	34

SYMBOL	PARAMETER	RATING	UNIT
BVCBO	Collector to base voltage	150	V
BVCEO	Collector to emitter voltage	60	V
BVEBO	Emitter to base voltage	7	V
IC	Continuous collector current (a)	4.5	A
ICm	Peak pulse current	15	A
Pd	Practical power dissipation (a) Linear derating factor	1.0 8	W mW/
Pd	Power dissipation at TA =25 (b) Linear derating factor	0.71 5.7	W mW/
Tj	Junction temperature	150
Tstg	Storage temperaturerange	-55 to +150

Description

Packaged in the E-line outline ZXTN2010A this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.