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ZXTN2010G

Features: • Extremely low equivalent on-resistance; RSAT = 35mV at 6A• 6 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hFE characteristics up to 10 ampsApplication• Emergency lighting circuits• Motor driving (...

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ZXTN2010G: Features: • Extremely low equivalent on-resistance; RSAT = 35mV at 6A• 6 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Excellent hF...

ZXTN2010G Data Sheet

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Part Number:
ZXTN2010G
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Extremely low equivalent on-resistance; RSAT = 35mV at 6A
• 6 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 10 amps




Application

• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC Modules
• Backlight Inverters




Pinout

Connection Diagram




Specifications

Part Number ZXTN2010G
Product Type NPN
VCEO (V) 60
IC (A) 6
ICM (A) 20
PD (W) 3
hFE Min 100
20
hFE Max 300
@ IC (A) 2
10
VCE (SAT) Max (mV) 70
260
@ IC (A) 1
6
@ IB (mA) 50
300
fT Min (MHz) 130
RCE (SAT) (m) 35





Description

Packaged in the SOT223 outline ZXTN2010G this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.




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