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ZXTN2031F

Features: • Higher power dissipation SOT23 Package• High peak current• Low saturation voltage• High gain• 80V forward blocking voltageApplication• MOSFET and IGBT gate driving• Motor drive• Relay, lamp and solenoid drive• DC-DC convertersPinout...

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SeekIC No. : 004552661 Detail

ZXTN2031F: Features: • Higher power dissipation SOT23 Package• High peak current• Low saturation voltage• High gain• 80V forward blocking voltageApplication• MOSFET and IGBT...

ZXTN2031F Data Sheet

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Part Number:
ZXTN2031F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Description



Features:

• Higher power dissipation SOT23 Package
• High peak current
• Low saturation voltage
• High gain
• 80V forward blocking voltage




Application

• MOSFET and IGBT gate driving
• Motor drive
• Relay, lamp and solenoid drive
• DC-DC converters




Pinout

Connection Diagram




Specifications

Part Number ZXTN2031F
Product Type NPN
VCEO (V) 50
IC(A) 5
ICM (A) 12
PD (W) 1.2
hFE Min 200
80
hFE Max 560
@I C (A) 0.5
5
VCE(SAT) Max (mV) 40
170
@ IC (A) 1
5
@ IB (mA) 100
250
fT Min (MHz) 125
RCE (SAT) (m) 24


Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
90
V
Collector-emitter voltage
V(BR)CEV
90
V
Collector-Emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7.0
V
Continuous collector current(a)
IC
5
A
Base current
IB
1.2
A
Peak pulse current
ICM
12
A
Power dissipation at TA=25(a)
Linear derating factor
PD
1.0
8.0
W
mW/
Power dissipation at TA =25(b)
Linear derating factor
PD
1.2
9.6
W
mW/
Power dissipation at TA =25(c)
Linear derating factor
PD
1.56
12.5
W
mW/
Operating and storage temperature range
Tj, Tstg
-55 to 150


NOTES:
(a)Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b)Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) As (b) above measured at t<5secs.






Description

Advanced process capability and package design ZXTN2031F have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.






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