ZXTN2038F

Features: · Low saturation voltage for reduced power dissipation· 1 to 2 amp high current capability· Pb-free· SOT23 packageApplication·Power MOSFET gate driving·Low loss power switchingSpecifications Part Number ZXTN2038F Product Type NPN VCEO (V) 60 IC (A) 1 ICM (A) 2 ...

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SeekIC No. : 004552662 Detail

ZXTN2038F: Features: · Low saturation voltage for reduced power dissipation· 1 to 2 amp high current capability· Pb-free· SOT23 packageApplication·Power MOSFET gate driving·Low loss power switchingSpecificatio...

floor Price/Ceiling Price

Part Number:
ZXTN2038F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Description



Features:

· Low saturation voltage for reduced power dissipation
· 1 to 2 amp high current capability
· Pb-free
· SOT23 package





Application

·Power MOSFET gate driving
·Low loss power switching





Specifications

Part Number ZXTN2038F
Product Type NPN
VCEO (V) 60
IC (A) 1
ICM (A) 2
PD (W) 0.35
hFE Min 100
80
hFE Max 300
@ IC (A) 0.5
1
VCE (SAT) Max (mV) 250
500
@ IC (A) 0.5
1
@ IB (mA) 50
100
fT Min (MHz) 150
RCE (SAT) (m) -


Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEV
80
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
5.0
V
Peak pulse current
ICM
2
A
Continuous collector current*
IC
1
A
Peak base current
IBM
1
A
Power dissipation @ TA=25*
PD
350
mW
Operating and storage temperature
Tj:Tstg
55 to +150

NOTES:
* For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.






Description

This transistor ZXTN2038F combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.






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