Features: • High peak current• Low saturation voltage• 6V reverse blocking voltageApplication• MOSFET and IGBT gate driving• DC-DC conversion• LED driving• Interface between low voltage IC's and loadPinoutSpecifications Part Number ZXTN25012EFL P...
ZXTN25012EFL: Features: • High peak current• Low saturation voltage• 6V reverse blocking voltageApplication• MOSFET and IGBT gate driving• DC-DC conversion• LED driving• ...
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| Part Number | ZXTN25012EFL |
| Product Type | NPN |
| VCEO(V) | 12 |
| IC (A) | 2 |
| ICM (A) | 15 |
| PD (W) | 0.35 |
| hFE Min | 500 210 |
| hFE Max | 1500 |
| @ IC (A) | 0.01 5 |
| VCE (SAT) Max (mV) | 85 130 |
| @ IC (A) | 1 2 |
| @ IB (mA) | 10 40 |
| fT Min (MHz) | 260 |
| RCE (SAT) (m) | 46 |
Advanced process capability ZXTN25012EFL has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.