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ZXTN25020BFH

Features: • High power dissipation SOT23 package• High peak current• Low saturation voltage• 50V forward blocking voltage• 3V reverse blocking voltageApplication• MOSFET gate drivers• Motor control• DC-DC convertersPinoutSpecifications Part Numb...

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SeekIC No. : 004552669 Detail

ZXTN25020BFH: Features: • High power dissipation SOT23 package• High peak current• Low saturation voltage• 50V forward blocking voltage• 3V reverse blocking voltageApplication•...

ZXTN25020BFH Data Sheet

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Part Number:
ZXTN25020BFH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Description



Features:

• High power dissipation SOT23 package
• High peak current
• Low saturation voltage
• 50V forward blocking voltage
• 3V reverse blocking voltage




Application

• MOSFET gate drivers
• Motor control
• DC-DC converters




Pinout

Connection Diagram




Specifications

Part Number ZXTN25020BFH
Product Type NPN
VCEO(V) 20
IC (A) 4.5
ICM (A) 10
PD (W) 1.25
hFE Min 100
75
hFE Max 300
@ IC (A) 0.01
4.5
VCE (SAT) Max (mV) 45
240
@ IC (A) 1
4.5
@ IB (mA) 100
90
fT Min (MHz) 185
RCE (SAT) (m) 27


Parameter

Symbol
Limit
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage (forward blocking)
VCEX
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-collector voltage (reverse blocking)
VECO
3
V
Emitter-base voltage
VEEO
7
V
Continuous Collector Current (c)
IC
4.5
A
Base current
IB
1
A
Peak Pulse Current
ICM
10
A
Power Dissipation at Tamb =25 (a)
Linear Derating Factor
PD
0.73
5.84
W
mW/
Power Dissipation at Tamb=25 (b)
Linear Derating Factor
PD
1.05
8.4
W
mW/
Power Dissipation at Tamb =25 (c)
Linear Derating Factor
PD
1.25
9.6
W
mW/
Power Dissipation at Tamb =25 (d)
Linear Derating Factor
PD
1.81
14.5
W
mW/
Operating and Storage Temperature Range
Tj,Tstg
-55 to 150





Description

Advanced process capability and package design ZXTN25020BFH have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.




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