Features: • Extremely low equivalent on resistance; RCE(sat) = 46m at 5A• 5 amps continuous current• Up to 10 amps peak current• Very low saturation voltages• Excellent hFE characteristics• 6V reverse blocking capabilityApplication• Emergency lighting circ...
ZXTN25060BZ: Features: • Extremely low equivalent on resistance; RCE(sat) = 46m at 5A• 5 amps continuous current• Up to 10 amps peak current• Very low saturation voltages• Excellent...
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| Part Number | ZXTN25060BZ |
| Product Type | NPN |
| VCEO (V) | 60 |
| IC (A) | 5 |
| ICM (A) | 10 |
| PD (W) | 1.8 |
| hFE Min | 100 45 |
| hFE Max | 300 |
| @ IC (A) | 0.01 2 |
| VCE (SAT) Max (mV) | 90 305 |
| @ IC (A) | 1 5 |
| @ IB (mA) | 50 500 |
| fT Min (MHz) | 185 |
| RCE (SAT) (m) | 48 |
| Parameter |
Symbol |
Limit |
Unit |
| Collector-base voltage |
VCBO |
150 |
V |
| Collector-emitter voltage (forward blocking) |
VCEX |
150 |
V |
| Collector-emitter voltage |
VCEO |
60 |
V |
| Emitter-collector voltage (reverse blocking) |
VECO |
6 |
V |
| Emitter-base voltage |
VEBO |
7 |
V |
| Continuous Collector current(c) |
IC |
5 |
A |
| Base current |
IB |
1 |
A |
| Peak pulse current |
ICM |
10 |
A |
| Power dissipation at Tamb =25(a) Linear derating factor |
PD |
1.1 8.8 |
W mW/ |
| Power dissipation at Tamb =25(b) Linear derating factor |
PD |
1.8 14.4 |
W mW/ |
| Power dissipation at Tamb =25(c) Linear derating factor |
PD |
2.4 19.2 |
W mW/ |
| Power dissipation at Tamb =25(d) Linear derating factor |
PD |
4.46 35.7 |
W mW/ |
| Operating and storage temperature range |
Tj, Tstg |
-55 to 150 |
Packaged in the SOT89 outline this new low saturation 60V NPN transistor ZXTN25060BZ offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.