Features: • 5.5 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Exceptional gain linearity down to 10mA• Excellent high current gain hold upApplication• DC - DC converters• MOSFET gate drivers• Charging circuitsR...
ZXTP2008Z: Features: • 5.5 amps continuous current• Up to 20 amps peak current• Very low saturation voltages• Exceptional gain linearity down to 10mA• Excellent high current gain ...
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Features: •2 Amps continuous current•Up to 5 Amps peak current•Very low saturati...
US $.51 - .87 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic Vceo -200V
Features: • 2 Amps continuous current• Up to 5 Amps peak current• Very low satur...

| PARAMETER | SYMBOL |
LIMIT |
UNIT |
| Collector-base voltage | BVCBO |
-50 |
V |
| Collector-emitter voltage | BVCEO |
-30 |
V |
| Emitter-base voltage | BVEBO |
-7 |
V |
| Peak Pulse Current | ICM |
-20 |
A |
| Continuous Collector Current(a) | IC |
-5.5 |
A |
| Power Dissipation at TA=25°C(a) Linear Derating Factor |
PD |
1.5 12 |
W mW/ |
| Power Dissipation at TA=25°C(b) Linear Derating Factor |
PD |
2.1 16.8 |
W mW/ |
| Operating and Storage Temperature Range | Tj:Tstg |
-55 to +150 |
| Part Number | ZXTP2008Z |
| Product Type | PNP |
| VCEO (V) | -30 |
| IC(A) | -5.5 |
| ICM (A) | -20 |
| PD (W) | 2.1 |
| hFE Min | 100 70 |
| hFE Max | 300 |
| @I C (A) | -1 -5 |
| VCE(SAT) Max (mV) | -55 -175 |
| @ IC (A) | -1 -5.5 |
| @ IB (mA) | -100 -500 |
| fT Min (MHz) | 110 |
| RCE (SAT) (m) | 24 |
Packaged in the SOT89 outline this new low saturation 30V PNP transistor of the ZXTP2008Z offers low on state lossesmaking it ideal for use in DC-DC circuits, line switching and various driving and power management functions.