ZXTP2012A

DC Collector/Base Gain hfe Min :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V
Packaging : Bulk
Maximum Operating Frequency : 120 MHz
Package / Case : E-Line
Maximum DC Collector Current : 3.5 A


Features:

• 3.5 amps continuous current
• Up to 15 amps peak current
• Very low saturation voltages
• Excellent gain up to 10 amps




Application

• DC - DC converters
• MOSFET gate drivers
• Power switches
• Motor control




Specifications

SYMBOL	PARAMETER	RATING	UNIT
BVCBO	Collector to base voltage	-100	V
BVCEO	Collector to emitter voltage	-60	V
BVEBO	Emitter to base voltage	-7	V
IC	Continuous collector current (a)	-3.5	A
ICm	Peak pulse current	-15	A
PD	Practical power dissipation at TA =25°C (a) Linear derating factor	1.0 8	W mW/°C
PD	Power dissipation at TA =25°C (b) Linear derating factor	0.71 5.7	W mW/°C
Tj	Junction temperature	150
Tstg	Storage temperaturerange	-55 to +150

Description

Packaged in the E-line outline this new low saturation 60V PNP transistor of the ZXTP2012A offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.