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ZXTP2029F

Features: • Higher power dissipation SOT23 package• High peak current• Low saturation voltage• 130V forward blocking voltageApplication• MOSFET and IGBT gate driving• Motor drive• DC-DC converters• High side switchesSpecifications Parameter Sym...

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SeekIC No. : 004552715 Detail

ZXTP2029F: Features: • Higher power dissipation SOT23 package• High peak current• Low saturation voltage• 130V forward blocking voltageApplication• MOSFET and IGBT gate driving...

ZXTP2029F Data Sheet

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Part Number:
ZXTP2029F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Description



Features:

• Higher power dissipation SOT23 package
• High peak current
• Low saturation voltage
• 130V forward blocking voltage




Application

• MOSFET and IGBT gate driving
• Motor drive
• DC-DC converters
• High side switches




Specifications

Parameter Symbol Limit Unit
Collector-base voltage VCBO -130 V
Collector-emitter voltage V(BR)CEV -130 V
Collector-emitter voltage VCEO -100 V
Emitter-base voltage VEBO -7.0 V
Peak pulse current ICM -5 A
Continuous collector current(a) IC -3 A
Base current IB -1 A
Power dissipation @ TA=25(a)
Linear derating factor		 PD 1.0
8.0		 W
mW/
Power dissipation @ TA=25(b)
Linear derating factor		 PD 1.2
9.6		 W
mW/
Power dissipation @ TA=25(c)
Linear derating factor		 PD 1.56
12.5		 W
mW/
Operating and storage temperature Tj:Tstg -55 to +150





Description

Advanced process capability and package design of the ZXTP2029F have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.






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