Features: • High power dissipation SOT23 package• High peak current• High gain• Low saturation voltageApplication• MOSFET gate drivers• Power switches• Motor controlPinoutSpecifications Parameter Symbol Limit Unit Collector-base voltage VCBO -...
ZXTP25020DFH: Features: • High power dissipation SOT23 package• High peak current• High gain• Low saturation voltageApplication• MOSFET gate drivers• Power switches• Moto...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: •2 Amps continuous current•Up to 5 Amps peak current•Very low saturati...
US $.51 - .87 / Piece
Transistors Bipolar (BJT) 200V PNP Low Vce 2A Ic Vceo -200V
Features: • 2 Amps continuous current• Up to 5 Amps peak current• Very low satur...
Parameter | Symbol | Limit | Unit |
Collector-base voltage | VCBO | -25 | V |
Collector-emitter voltage (forward blocking) | VCEO | -20 | V |
Emitter-collector voltage (reverse blocking) | VECO | -4 | V |
Emitter-base voltage | VEBO | -7 | V |
Continuous collector current(c) | IC | -4 | A |
Base current | IB | -1 | A |
Peak pulse current | ICM | -10 | A |
Power dissipation at Tamb =25°C(a) Linear derating factor |
PD | 0.73 5.84 |
W |
Power dissipation at Tamb =25°C(b) Linear derating factor |
PD |
1.05 8.4 |
W |
Power dissipation at Tamb =25°C(c) Linear derating factor |
PD |
1.25 |
W |
Power dissipation at Tamb =25°C(d) Linear derating factor |
PD |
1.81 |
W |
Operating and storage temperature range | Tj, Tstg | -55 to 150 | °C |
Advanced process capability and package design of the ZXTP25020DFH have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.