ZXTP25100BFH

Features: • High power dissipation SOT23 package• High peak current• Low saturation voltage• 140V forward blocking voltaget• 7V reverse blocking voltageApplication• MOSFET and IGBT gate driving• DC - DC converters• Motor drive• Relay, lamp, and...

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SeekIC No. : 004552733 Detail

ZXTP25100BFH: Features: • High power dissipation SOT23 package• High peak current• Low saturation voltage• 140V forward blocking voltaget• 7V reverse blocking voltageApplication̶...

floor Price/Ceiling Price

Part Number:
ZXTP25100BFH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Features:

• High power dissipation SOT23 package
• High peak current
• Low saturation voltage
• 140V forward blocking voltaget
• 7V reverse blocking voltage





Application

• MOSFET and IGBT gate driving
• DC - DC converters
• Motor drive
• Relay, lamp, and solenoid drive





Pinout

  Connection Diagram




Specifications

Part Number ZXTP25100BFH
Product Type PNP
VCEO (V) -100
IC (A) -2
ICM (A) -5
PD (W) 1.25
hFE Min 100
15
hFE Max 300
@ IC (A) -0.01
-2
VCE (SAT) Max (mV) -130
-295
@ IC (A) -1
-2
@ IB (mA) -100
-200
fT Min (MHz) 200
RCE (SAT) (m) 108


Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-140
V
Collector-Emitter voltage (forward blocking)
VCEX
-140
V
Collector-Emitter voltage
VCEO
-100
V
Emitter-collector voltage (reverse blocking)
VECX
-7
V
Emitter-base voltage
VEBO
-7
V
Continuous collector current(c)
IC
-2
A
Peak pulse current
ICM
-515
A
Power dissipation at TA=25(a)
Linear derating factor
PD
0.73
5.84
W
mW/
Power dissipation at TA =25(b)
Linear derating factor
PD
1.05
8.4
W
mW/
Power dissipation at TA =25(c)
Linear derating factor
PD
1.25
9.6
W
mW/
Power dissipation at TA =25(d)
Linear derating factor
PD
1.81
14.5
W
mW/
Operating and storage temperature range
Tj, Tstg
-55 to 150





Description

Advanced process capability and package design of the ZXTP25100BFH have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.






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