Features: • Low Saturation Transistor• High Gain - 300 minimum• Low VF, fast switching SchottkyApplication• Mobile telecomms, PCMCIA & SCSI• DC-DC ConversionPinoutSpecifications Part Number ZXTS1000E6 Product Type PNP + Schottky VCEO(V) -1240 I...
ZXTS1000E6: Features: • Low Saturation Transistor• High Gain - 300 minimum• Low VF, fast switching SchottkyApplication• Mobile telecomms, PCMCIA & SCSI• DC-DC ConversionPinoutS...
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| Part Number | ZXTS1000E6 |
| Product Type | PNP + Schottky |
| VCEO(V) | -12 40 |
| IC(A) | -1.25 0.5 |
| ICM (A) | -3 |
| PD (W) | 0.9 0.9 |
| hFE Min | 200 |
| @ IC (A) | -0.5 |
| VCE (SAT) Max (mV) | -175 |
| @ IC (A) | -0.5 |
| @ IB (mA) | -10 |
| VFMax (V) | - 0.5 |
| @ IF(A) | - 1 |
| RCE(sat) (m) | 160 |
| Spicemodel |
| PARAMETER | SYMBOL |
VALUE |
UNIT |
| Transistor | |||
| Collector-Base Voltage | VCBO |
-12 |
V |
| Collector-Emitter Voltage | VCEO |
-12 |
V |
| Emitter-Base Voltage | VEBO |
-5 |
V |
| Continuous Collector Current | IC |
-1.25 |
A |
| Schottky Diode | |||
| Continuous Reverse Voltage | VR |
40 |
V |
| Forward Current | IF |
0.5 |
A |
| Non Repetitive Forward Current t100µs t 10ms |
IFSM |
6.75 3 |
A A |
| Package | |||
| Power Dissipation at Tamb=25°C single die "on" both die "on" |
PD |
0.725 0.885 |
W W |
| Storage Temperature Range | Tstg |
-55 to +150 |
|
| Junction Temperature | Tj |
125 |
|