2N720A

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-18


Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-base Voltage(IE=0)	120	V
VCEO	Collectoremitter Voltage(IR=0)	80	V
VEBO	EmitterbaseVoltage(IC=0)	7	V
IC	Collector Current	500	mA
Ptot	Total Power Dissipation at Tamb25°C at Tcase25°C	0.5 1.8	W W
Tstg,Tj	Storage and Junction Temperature	65 to 200	°C

Description

This is the description about 2N720A, 2N1893 and 2N1893Sof the NPN low power silicon transistor, qualified per MIL-PRF-19500/182.
The absolute Maximum Ratings are these (TA = 25°C). Collector-Emitter Voltage is 80 Vdc. Collector-Base Voltage is 120 Vdc. Emitter-Base Voltage is 7.0 Vdc. Collector-Emitter Voltage (RBE = 10 ) is 100 Vdc. Collector Current is 500 mAdc. Total Power Dissipation @ TA = +25°C is 0.5W for 2N720A and is 0.8W for 2N1893 and 2N1893S; @ TC = +2°C) is 1.8W for 2N720A and is 3.0W for 2N1893 and 2N1893S. Operating Junction Temperature Range is from -65 to +200°C and Storage Junction Temperature Range is also from -65 to +200°C.
These are the ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted). Collector-Emitter Breakdown Voltage (IC = 30 mAdc) is 80 Vdc. Collector-Emitter Breakdown Voltage (IC = 10 mAdc, RBE = 10 is 100 Vdc. Collector-Base Cutoff Current (VCB = 120 Vdc) is 10Adc and (VCB = 90 Vdc) is 10 Adc. Emitter-Base Cutoff Current (VEB = 7.0 Vdc) is 10Adc (VEB = 5.0 Vdc) is 10 Adc. Forward-Current Transfer Ratio (IC = 0.1 mAdc, VCE = 10 Vdc) is 20 and (IC = 10 mAdc, VCE = 10 Vdc) is 35 and (IC = 150 mAdc, VCE = 10 Vdc) is from 40 to 120. Collector-Emitter Saturation Voltage(IC = 150 mAdc, IB = 15 mAdc) is 5 Vdc. Base-Emitter Voltage (IC = 150 mAdc, IB = 15 mAdc) is 1.3 Vdc.
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The2N720AisasiliconplanarepitaxialNPNtran-sistorinJedecTO-18metalcase.Itissuitablefora widevarietyofamplifierandswitchingapplications.




Parameters:

Technical/Catalog Information	2N720A
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	500mA
Power - Max	1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	5V @ 15mA, 150mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-18, Metal Case
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N720A 2N720A 497 3112 5 ND 49731125ND 497-3112-5