BCP55

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 100 MHz
Package / Case : SOT-223
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 40
Configuration : Single Dual Collector


Features:

·High collector current
·1.3 W power dissipation


Specifications

Parameter	Symbol	Rating	UNIT
Collector-base voltage BCP54	VCBO	45	V
BCP55		60	V
BCP56		100	V
Collector-emitter voltage BCP54	VCEO	45	V
BCP55		60	V
BCP56		80	V
Emitter-base voltage	VEBO	5	V
Collector current(DC)	IC	1	A
peak Collector current	ICm	1.5	A
peak base current	Ibm	0.2	V
Collector dissipation	Ptot	1.33	W
Storage temperature	Tstg	-65 to +150
Jumction temperature	Tj	150
operating ambient temperature	Tamb	-65 to +150
thermal resistance from junction to ambient	RthjA	94	K/W
thermal resistance from junction to soldering point	Rthjs	13	K/W

Parameters:

Technical/Catalog Information	BCP55
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	1.5A
Power - Max	1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BCP55 BCP55 BCP55FSDKR ND BCP55FSDKRND BCP55FSDKR