BD180

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 15
Maximum DC Collector Current : 1 A
Packaging : Bulk
Maximum Operating Frequency : 3 MHz (Min)
Package / Case : TO-225


Application

·For medium power linear and switching applications




Specifications

SYMBOL			CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	BD176	Open emitter	-45	V
		BD178		-60
		BD180		-80
VCEO	Collector-emitter voltage	BD176	Open base	-45	V
		BD178		-60
		BD180		-80
VEBO	Emitter -base voltage		Open collector	-5	V
IC	Collector current (DC)			-3	A
ICM	Collector current-Peak			-7	A
PC	Collector power dissipation		TC=25	30	W
Tj	Junction temperature			150
Tstg	Storage temperature			-65~150

Description

The BD180 features are as follows:

With TO-126 package
·Complement to type BD175 /177 /179

Parameters:

Technical/Catalog Information	BD180
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	3A
Power - Max	30W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	800mV @ 100mA, 1A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BD180 BD180