MOSFET TO-247 / FDH3632
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
| Resistance Drain-Source RDS (on) : | 7.5 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-247 | Packaging : | Tube |
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain to Source Voltage | 100 | V |
| VGS | Gate to Source Voltage | ±20 |
V |
| ID | Drain Current Continuous (TC < 111, VGS = 10V) |
80 | A |
| Continuous (Tamb = 25, VGS= 10V, RJA= 43/W) | 12 | A | |
| Pulsed | Figure 4 | A | |
| EAS | Single Pulse Avalanche Energy (Note 1) | 393 | mJ |
| PD | Power dissipation | 310 | W |
| Derate above 25 | 2.07 | W/ | |
| TJ, TSTG | Operating and Storage Temperature | -55 to 175 |
| Technical/Catalog Information | FDH3632 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 6000pF @ 25V |
| Power - Max | 310W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDH3632 FDH3632 |