FDS6680

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 11.5 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

11.5 A, 30 V. RDS(ON)= 0.010 W  @ VGS = 10 V              
                     RDS(ON)= 0.015 W  @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching.
Low gate charge (typical Qg = 19 nC).


Pinout




Specifications

</tabl

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	11.5	A
		50
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This FDS6680 N-Channel Logic Level MOSFET has  been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional    switching PWM controllers.

The MOSFET FDS6680 features faster switching and lower gate gharge than other MOSFETs with comparable  RDS(ON) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply  designswith higher overall efficiency.

Parameters:

Technical/Catalog Information	FDS6680
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11.5A
Rds On (Max) @ Id, Vgs	10 mOhm @ 11.5A, 10V
Input Capacitance (Ciss) @ Vds	2070pF @ 15V
Power - Max	1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	27nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS6680 FDS6680 FDS6680DKR ND FDS6680DKRND FDS6680DKR