Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Packaging
: Tube
Continuous Drain Current
: 18 A
Drain-Source Breakdown Voltage
: 150 V
Resistance Drain-Source RDS (on)
: 0.11 Ohms
Package / Case
: TO-252AA
Features: • Ultra Low On-Resistance
- rDS(ON) = 0.110, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating CurveSpecificationsDrain to Source Voltage (Note 1) .......................... V
DSS 150 V
Drain to Gate Voltage (R
GS = 20k) (Note 1).................... V
DGR 150 V
Gate to Source Voltage ............................... V
GS ±20 V
Drain Current
Continuous(T
C= 25, V
GS= 10V)(Figure 2) ........................I
D18 A
Continuous (T
C= 100, V
GS= 10V) (Figure 2).......................I
D13 A
Pulsed Drain Current ................................I
DM Figure 4
Pulsed Avalanche Rating ...........................ULS Figure6,14,15
Power Dissipation ....................................P
D110W
Derate Above 25 ...................................0.73 W/
Operating and Storage Temperature ....................T
J, T
STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T
L 300
Package Body for 10s, See Techbrief 334 ......................T
pkg 260
NOTE:
1. T
J = 25 to 150
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
.
Parameters: | Technical/Catalog Information | HUFA75829D3S |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 18A, 10V |
| Input Capacitance (Ciss) @ Vds | 1080pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 70nC @ 20V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HUFA75829D3S
HUFA75829D3S
|
HUFA75829D3S Data Sheet
