IDT70V3569S

Features: ` True Dual-Port memory cells which allow simultaneous access of the same memory location` High-speed clock to data access Commercial: 4.2/5/6ns (max.) Industrial: 5/6ns (max)` Pipelined output mode` Counter enable and reset features` Dual chip enables allow for depth expansion with...

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SeekIC No. : 004372128 Detail

IDT70V3569S: Features: ` True Dual-Port memory cells which allow simultaneous access of the same memory location` High-speed clock to data access Commercial: 4.2/5/6ns (max.) Industrial: 5/6ns (max)` Pipeline...

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Part Number:
IDT70V3569S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/7

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Product Details

Description



Features:

` True Dual-Port memory cells which allow simultaneous
   access of the same memory location
` High-speed clock to data access
Commercial: 4.2/5/6ns (max.)
Industrial: 5/6ns (max)
` Pipelined output mode
` Counter enable and reset features
` Dual chip enables allow for depth expansion without additional logic
` Full synchronous operation on both ports
7.5ns cycle time, 133MHz operation (9.6 Gbps bandwidth)
Fast 4.2ns clock to data out
1.8ns setup to clock and 0.7ns hold on all control, data, and
   address inputs @ 133MHz
Data input, address, byte enable and control registers
Self-timed write allows fast cycle time
` Separate byte controls for multiplexed bus and bus matching compatibility
` LVTTL- compatible, single 3.3V (±150mV) power supply for core
` LVTTL- compatible, selectable 3.3V (±150mV)/2.5V (±125mV)
   power supply for I/Os and control signals on each port
` Industrial temperature range (-40°C to +85°C) is
   available for selected speeds
` Available in a 208-pin Plastic Quad Flatpack (PQFP),
   208-ball fine-pitch Ball Grid Array, and 256-pin Ball Grid Array



Pinout

  Connection Diagram


Specifications

Symbol Rating Commercial & Industrial Unit
VTERM(2) Terminal Voltage with Respect to GND -0.5 to +7.0 V
TBIAS Temperature Under Bias -55 to +125
TSTG Storage Temperature -65 to +150
IOUT DC Output Current 50 mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or
4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV.



Description

The IDT70V3569S is a high-speed 16K x 36 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT70V3569S has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.

The IDT70V3569S can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) remains at 3.3V.




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