Features: ` True Dual-Port memory cells which allow simultaneous access of the same memory location` High-speed clock to data access Commercial: 4.2/5/6ns (max.) Industrial: 5/6ns (max)` Pipelined output mode` Counter enable and reset features` Dual chip enables allow for depth expansion with...
IDT70V3569S: Features: ` True Dual-Port memory cells which allow simultaneous access of the same memory location` High-speed clock to data access Commercial: 4.2/5/6ns (max.) Industrial: 5/6ns (max)` Pipeline...
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| Symbol | Rating | Commercial & Industrial | Unit |
| VTERM(2) | Terminal Voltage with Respect to GND | -0.5 to +7.0 | V |
| TBIAS | Temperature Under Bias | -55 to +125 | |
| TSTG | Storage Temperature | -65 to +150 | |
| IOUT | DC Output Current | 50 | mA |
The IDT70V3569S is a high-speed 16K x 36 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT70V3569S has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.
The IDT70V3569S can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) remains at 3.3V.