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IRFU15N20DPBF

MOSFET

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SeekIC No. : 00156852 Detail

IRFU15N20DPBF: MOSFET

IRFU15N20DPBF Data Sheet

floor Price/Ceiling Price

US $ .35~.35 / Piece | Get Latest Price
Part Number:
IRFU15N20DPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~4480
  • Unit Price
  • $.35
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : 30 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 165 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 17 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 165 m Ohms


Features:

·Low Gate-to-Drain Charge to Reduce  Switching Losses
·Fully Characterized Capacitance Including   Effective COSS   to Simplify Design, (See     App. Note AN1001)
· Fully Characterized Avalanche Voltage     and Current


Application

·High frequency DC-DC converters
· Lead-Free


Specifications
Parameter
  Max.
Units
ID@TC = 25

Continuous Drain Current,VGS@10V
17
A
ID@TC =100

Continuous Drain Current,VGS@10V
12
IDM

Pulsed Drain Current

68
PD@T C= 25

CPower Dissipatio

140
PD@TA = 25

CPower Dissipation*
3.0
W

Linear Derating Factor
0.96
W/
VGS
dv/dt

Gate-to-Source Voltage
Peak Diode Recovery dv/dt

±30
8.3

0
V/ns
TJ

Operating Junction and
-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds
300 (1.6mm from case )



Parameters:

Technical/Catalog InformationIRFU15N20DPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs165 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 910pF @ 25V
Power - Max3W
PackagingTube
Gate Charge (Qg) @ Vgs41nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFU15N20DPBF
IRFU15N20DPBF



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