MRF6P9220HR3

MOSFET RF N-CH 28V 47W NI-860C3

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SeekIC No. : 003434833 Detail

MRF6P9220HR3: MOSFET RF N-CH 28V 47W NI-860C3

floor Price/Ceiling Price

US $ 67.06~67.06 / Piece | Get Latest Price
Part Number:
MRF6P9220HR3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~250
  • Unit Price
  • $67.06
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: - Continuous Collector Current : 5 mA
Manufacturer: Freescale Semiconductor Transistor Type: LDMOS
Frequency: 880MHz Gain: 20dB
Voltage - Test: 28V Current Rating: 10µA
Noise Figure: - Current - Test: 1.6A
Power - Output: 47W Voltage - Rated: 68V
Package / Case: NI-860C3 Supplier Device Package: NI-860C3    

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Gain: 20dB
Transistor Type: LDMOS
Voltage - Test: 28V
Current - Test: 1.6A
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Voltage - Rated: 68V
Power - Output: 47W
Frequency: 880MHz
Package / Case: NI-860C3
Supplier Device Package: NI-860C3


Features:

Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD = 28 Volts,IDQ = 1600 mA, Pout = 47 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =9.8 dB @ 0.01% Probability on CCDF.Power Gain ó 20 dB Drain Efficiency ó 30% ACPR @ 750 kHz Offset ó -47.1 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Device Designed for Push-Pull Operation Only
Qualified Up to a Maximum of 32 VDDOperation
Integrated ESD Protection
Lower Thermal Resistance Package
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
Low Gold Plating Thickness on Leads, 40µ Nominal.
Pb-Free and RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.



Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Drain-Source Voltage VGS -0.5, +12 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 700
4
W
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C
CW Operation CW 220 W



Description

MRF6P9220HR3 is Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source amplifier applications in 28 volt base station equipment.


Parameters:

Technical/Catalog InformationMRF6P9220HR3
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating2.4A
Package / CaseNI-860C3
PackagingTape & Reel (TR)
Drawing Number375; 375G-04 ; HR; 5
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6P9220HR3
MRF6P9220HR3



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