SST29VE010

Features: • Single Voltage Read and Write Operations 5.0V-only for the 29EE010 3.0V-only for the 29LE010 2.7V-only for the 29VE010• Superior Reliability Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention• Low Power Consumption Active Current: 20 mA (typical...

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SeekIC No. : 004505235 Detail

SST29VE010: Features: • Single Voltage Read and Write Operations 5.0V-only for the 29EE010 3.0V-only for the 29LE010 2.7V-only for the 29VE010• Superior Reliability Endurance: 100,000 Cycles (typica...

floor Price/Ceiling Price

Part Number:
SST29VE010
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/7

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Product Details

Description



Features:

• Single Voltage Read and Write Operations
5.0V-only for the 29EE010
3.0V-only for the 29LE010
2.7V-only for the 29VE010
• Superior Reliability
Endurance: 100,000 Cycles (typical)
Greater than 100 years Data Retention
• Low Power Consumption
Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 3.0/2.7V
Standby Current: 10 A (typical)
• Fast Page-Write Operation
128 Bytes per Page, 1024 Pages
Page-Write Cycle: 5 ms (typical)
Complete Memory Rewrite: 5 sec (typical)
Effective Byte-write Cycle Time: 39 s
(typical)
• Fast Read Access Time
5.0V-only operation: 90 and 120 ns
3.0V-only operation: 150 and 200 ns
2.7V-only operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
Internal Vpp Generation
• End of Write Detection
Toggle Bit
Data# Polling
• Hardware and Software Data Protection
• TTL I/O Compatibility
• JEDEC Standard Byte-wide EEPROM Pinouts
• Packages Available
32-Pin TSOP (8x20 & 8x14 mm)
32-Lead PLCC
32 Pin Plastic DIP



Pinout

  Connection Diagram


Specifications

Temperature Under Bias ................................................................................................................ -55°C to +125°C
Storage Temperature ..................................................................................................................... -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ............................................................................. -0.5V to VCC+ 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ....................................................... -1.0V to VCC+ 1.0V
Voltage on A9 Pin to Ground Potential ............................................................................................... -0.5V to 14.0V
Package Power Dissipation Capability (Ta = 25°C) .......................................................................................... 1.0W
Through Hole Lead Soldering Temperature (10 Seconds) .............................................................................. 300°C
Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................................... 240°C
Output Short Circuit Current(1) ......................................................................................................................100 mA
Note: (1) Outputs shorted for no more than one second. No more than one output shorted at a time.



Description

The SST29VE010 are 128K x 8 CMOSpage mode EEPROMs manufactured with SST's proprietary, high performance CMOS SuperFlash technology.

The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29VE010 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29VE010 conform to JEDEC standard pinouts for byte-wide memories.

Featuring high performance page write, the 29EE010/ 29LE010/29VE010 provide a typical byte-write time of 39 sec. The entire memory, i.e., 128K bytes, can be written page by page in as little as 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a write cycle. To protect against inadvertent write, the 29EE010/29LE010/ 29VE010 have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the 29EE010/ 29LE010/29VE010 are offered with a guaranteed pagewrite endurance of 104 or 103 cycles. Data retention is rated at greater than 100 years.

The SST29VE010 are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the 29EE010/29LE010/29VE010 significantly improve performance and reliability, while lowering power consumption, when compared with floppy disk or EPROM approaches. The 29EE010/29LE010/ 29VE010 improve flexibility while lowering the cost for program, data, and configuration storage applications. To meet high density, surface mount requirements, the 29EE010/29LE010/29VE010 are offered in 32-pin TSOP and 32-lead PLCC packages. A 600-mil, 32-pin PDIP package is also available. See Figures 1 and 2 for pinouts.




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