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STF9NM60N

MOSFET N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO

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SeekIC No. : 00149964 Detail

STF9NM60N: MOSFET N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO

STF9NM60N Data Sheet

floor Price/Ceiling Price

US $ .81~1.25 / Piece | Get Latest Price
Part Number:
STF9NM60N
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.25
  • $1.1
  • $.9
  • $.81
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 745 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 745 mOhms


Features:

·100% AVALANCHE TESTED
· LOW INPUT CAPACITANCE AND GATE CHARGE
·LOW GATE INPUT RESISTANCE


Application

·HIGHER EFFICIENCIES


Specifications

Symbol Parameter Value   Unit
    TO-220/DPAK/IPAK TO-220FP  
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VECR Emitter-Collector Voltage 600 V
VGE Gate-Emitter Voltage ±25 V
IC Collector Current (continuous) at TC = 25°C (#) 20 9 A
IC Collector Current (continuous) at TC = 100°C (#) 10 6 A
ICM (`) Collector Current (pulsed) 40 A
IF Diode RMS Forward Current at TC = 25°C 10 A
PTOT Total Dissipation at TC = 25°C 60 25 W
  Derating Factor 0.48 0.20 W/°C
VISO Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) - 2500 V
Tstg Storage Temperature 55 to 150 °C
Tj Operating Junction Temperature




Description

The STF9NM60N STP9NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.




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